2005-04-20

RA30H0608M - IDDQ

IDDQ versus VGG

Below is a table of measurements showing the drain quiescent current (IDDQ) versus VGG. All measurements made at VDD = 13,8 V.

It seems that the spread is rather big and much higher than expected. A variation in IDDQ of 10% or so for the same VGG was expected. The consequence might be that the capabilities of the control loop must be extended.

Measured by Batch Setup IDDQ [mA]
At VGG = 3,5 V At VGG = 4,0 V At VGG = 4,5 V At VGG = 5,0 V
OZ2M 032XA PA - 110 520 1550
OZ1BGZ 03XXA PA 330 (3,9 V) 450 1500 3000
OZ1DJJ 032XA PA     1400 (4,7 V)  
GW8IZR 034XA PA 6 62 438 1600
OZ1TF 03XXA PA 100 700 1900 3200
OZ2M 03XXA DC 113 560 1750 -
OZ2M 03XXA DC 110 600 1680 -
OZ2M 03XXA DC 19 130 698 1940
OZ9FW 03XXA PA 400 (3,8 V) 700 1950 -
PA5DD 03XXA PA 240 (3,6 V) 690 1780 3100

Mitsubishi response

"RA30H0608M is using MOSFET designed for the HF band. These "HF band" MOSFETs have a large distribution of Vthreshold, and distribution range is 2,0 V (actual value is approximately 2,0 V to 4,0 V). 

Therefore I think the results the customer evaluated are right.

We recommend you adjust IDDQ by controlling VGG when using digital and AM/SSB modulation."


Bo, OZ2M, www.rudius.net/oz2m