Below is a table of measurements showing the drain quiescent current (IDDQ) versus VGG. All measurements made at VDD = 13,8 V.
It seems that the spread is rather big and much higher than expected. A variation in IDDQ of 10% or so for the same VGG was expected. The consequence might be that the capabilities of the control loop must be extended.
|Measured by||Batch||Setup||IDDQ [mA]|
|At VGG = 3,5 V||At VGG = 4,0 V||At VGG = 4,5 V||At VGG = 5,0 V|
|OZ1BGZ||03XXA||PA||330 (3,9 V)||450||1500||3000|
|OZ1DJJ||032XA||PA||1400 (4,7 V)|
|OZ9FW||03XXA||PA||400 (3,8 V)||700||1950||-|
|PA5DD||03XXA||PA||240 (3,6 V)||690||1780||3100|
"RA30H0608M is using MOSFET designed for the HF band. These "HF band" MOSFETs have a large distribution of Vthreshold, and distribution range is 2,0 V (actual value is approximately 2,0 V to 4,0 V).
Therefore I think the results the customer evaluated are right.
We recommend you adjust IDDQ by controlling VGG when using digital and AM/SSB modulation."
Bo, OZ2M, www.rudius.net/oz2m